National Institute of Technology Meghalaya has released an official advertisement for recruitment to one Junior Research Fellow position under a DRDO-funded research project in the Department of Electronics and Communication Engineering. The post is temporary and project-based, with the appointment linked to the duration of the sponsored project. The official advertisement carries Advt. No. NITMGH/ES/DRDO/80/EC/2026-27/45 dated 10 April 2026.

The recruitment is for the project titled Design and development of SiC MEMS based piezoresistive and MOSFET embedded pressure sensors for high temperature application. Candidates with relevant M.Tech. or M.E. qualifications, M.Sc. with valid GATE or NET, or GATE-qualified B.Tech. or B.E. in eligible disciplines can apply. The fellowship is Rs. 37,000 per month plus HRA or accommodation as per institute norms.

Although many users search this vacancy as an apply online recruitment, the official notice makes the application method clear: candidates must send a soft copy of the filled application form and supporting documents by email. Before applying, applicants should check the discipline requirements, age limit, document list, and interview schedule given in the official PDF.

Recruitment overview

NIT Meghalaya is recruiting for one Junior Research Fellow post under a DRDO-sponsored project in Electronics and Communication Engineering. The position is tied to a research project on SiC MEMS based piezoresistive and MOSFET embedded pressure sensors for high-temperature applications.

ItemDetails
OrganisationNIT Meghalaya
PostJunior Research Fellow (JRF)
PostsOne
Sponsoring agencyDirectorate of Futuristic Technology Management, DRDO
Advertisement date10 April 2026
Application deadline30 April 2026

This is a project position and not a regular permanent appointment.

Project title and research area

The official project title is Design and development of SiC MEMS based piezoresistive and MOSFET embedded pressure sensors for high temperature application. The project number mentioned in the advertisement is DFTM/07/3603/DIA-CoE,MZU/MEMS/P-03.

The work is research-oriented and focused on pressure sensor development for high-temperature applications. Applicants should read the project area carefully before applying because the required academic background is directly linked to this technical domain.

Eligibility criteria

The official notice lists multiple qualification routes. Candidates should satisfy any one of the listed academic pathways relevant to the project.

  • M.Tech. or M.E. in Microelectronics, VLSI, Electronics, or related disciplines.
  • M.Sc. in related fields such as Electronics with valid GATE or NET qualification.
  • GATE-qualified candidates with B.Tech. or B.E. in Electronics and Communication Engineering or related disciplines.

The advertisement does not prescribe a written test syllabus. Eligibility is based on the academic background and the requirements of the project.

Age limit and fellowship

The age limit mentioned in the official advertisement is 30 years. Age relaxation will be allowed as per institute norms and guidelines.

ComponentOfficial detail
Age limit30 years
Age relaxationAs per institute norms and guidelines
FellowshipRs. 37,000 per month
Additional supportHRA or accommodation as per institute norms

If a candidate is selected, the final financial and accommodation terms will be governed by the institute's applicable rules.

Duration of the position

The appointment is for two years or till the closure of the project, whichever is earlier. The advertisement also states that performance evaluation will be carried out each year.

This means the post is temporary and continuation depends on both project duration and satisfactory performance.

How to apply

The official advertisement requires candidates to apply by email. There is no separate application portal or fee notice mentioned for this JRF post.

  1. Fill the prescribed application form attached with the advertisement.
  2. Prepare a single merged PDF containing the filled application form and supporting documents.
  3. Email the PDF to pradeeprathore@nitm.ac.in.
  4. Send a copy to llksingh@nitmanipur.ac.in.
  5. Use the subject line: Application for JRF Position for DRDO Project.

Applicants should complete the email submission before 30 April 2026.

Documents required with the application

The advertisement asks candidates to send the application along with supporting records in a single PDF. Based on the official notice, applicants should attach the following:

  • Filled application form
  • Age proof certificate
  • Class 10 certificate
  • Class 12 certificate
  • Highest qualification degree certificate
  • Relevant mark sheets
  • Brief resume or curriculum vitae or biodata

Applicants should make sure the attachments are complete and clearly readable before sending the email.

Selection process and interview

NIT Meghalaya will shortlist candidates based on merit and the needs of the project. The official notice makes it clear that meeting the minimum qualification does not automatically guarantee an interview call.

  • Shortlisting will be based on merit and project requirements.
  • Only shortlisted candidates will be informed for interview or examination through email.
  • The interview may be conducted in online or offline mode.
  • No TA or DA will be paid for attending the interview or joining the position.

Candidates called for the process should follow the interview instructions issued by the institute after shortlisting.

Important dates

EventDate
Advertisement date10 April 2026
Last date of application30 April 2026
Notification of shortlisted candidates04 May 2026
Tentative date of interview or examination06 May 2026

These dates are part of the official PDF. Candidates should still check the institute website and their email for any update or change.

Job nature and place of work

The selected JRF will work on design, simulation, and fabrication process flow related to development of SiC-MEMS based pressure sensors for high-temperature applications.

The institute address given in the notice is Room No. 210, Block-D, Department of Electronics and Communication Engineering, NIT Meghalaya, Saitsohpen, Sohra, East Khasi Hills, Meghalaya, India - 793108. Candidates should treat this as the project and institute contact address for this recruitment.

What is confirmed and what is not mentioned

The official PDF clearly confirms the number of posts, qualifications, age limit, fellowship, application email, and schedule. It also confirms that the position is temporary and that the interview can be online or offline.

The notice does not mention any application fee, reservation break-up, separate online portal, or written test syllabus. Unless the institute issues another official update, candidates should not assume these details beyond what is stated in the advertisement.

Frequently Asked Questions

How many posts are available in NIT Meghalaya JRF Recruitment 2026?

There is one Junior Research Fellow post.

What is the last date to apply for NIT Meghalaya JRF Recruitment 2026?

The last date of application is 30 April 2026.

What is the salary or fellowship for the JRF post?

The fellowship is Rs. 37,000 per month plus HRA or accommodation as per institute norms.

What qualifications are accepted for this JRF post?

Eligible candidates include those with M.Tech. or M.E. in relevant disciplines, M.Sc. in related fields with valid GATE or NET, or GATE-qualified B.Tech. or B.E. candidates in Electronics and Communication Engineering or related disciplines.

How should candidates apply for NIT Meghalaya JRF Recruitment 2026?

Candidates must email the filled application form and supporting documents in a single PDF to the official email ID mentioned in the advertisement.

What is the age limit for the NIT Meghalaya JRF post?

The age limit is 30 years, with relaxation as per institute norms.

Will there be an interview for this recruitment?

Yes. Shortlisted candidates will be called for interview or examination, which may be held in online or offline mode.

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